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Optimising the SiNW-MOSFET transistor and the SiNW-ISFET sensor is a complex challenge due to the miniaturisation of the devices. Despite various strategies to improve their performance and reduce undesirable effects such as subthreshold current, current approaches are considered insufficient. In this study, a new genetic algorithm-based approach is proposed to optimize transistor MOSFET based on silicon nanowires and SiNW-ISFET sensors. The electrical characteristics of SiNW-MOSFET and SiNW-ISFET are predicted as a function of various parameters, such as drain current, drain voltage, gate voltage, channel length, and number, length of nanowires, and pH.

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Genetic Algorithm-Based Parameter Extraction for Optimized Modeling of SiNW-MOSFET Transistor and SiNW-ISFET Sensor

  • 会议论文

  • 发表日期：

    2025年

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  • Nabil Ayadi,
  • Ahmet Lale,
  • Bekkay Hajji,
  • Jerome Launay,
  • Pierre Temple-Boyer,
  • Jérôme Bosche

摘要

Optimising the SiNW-MOSFET transistor and the SiNW-ISFET sensor is a complex challenge due to the miniaturisation of the devices. Despite various strategies to improve their performance and reduce undesirable effects such as subthreshold current, current approaches are considered insufficient. In this study, a new genetic algorithm-based approach is proposed to optimize transistor MOSFET based on silicon nanowires and SiNW-ISFET sensors. The electrical characteristics of SiNW-MOSFET and SiNW-ISFET are predicted as a function of various parameters, such as drain current, drain voltage, gate voltage, channel length, and number, length of nanowires, and pH.