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This theoretical paper studies the creation of the electronic states within a periodic structure composed of two semiconducting cylindrical quantum wires (GaAs/AlGaAs) positioned between two substrates (GaAs). This structure includes a defective quantum wire located in the middle of the system. The analysis relies on the Schrödinger equation in cylindrical coordinates to calculate the eigen energies and associated wave functions. Solutions of the radial part take the form of Bessel functions, while the axial part of the analysis involves a combination of incident and reflected waves. By applying the boundary conditions, we obtain a transfer matrix which amplitudes provide the electronic transmission rate. Our results show that the emergence of localized states in bandgaps and the disappearance of passbands can be explained by taking into account the effect of quantum confinement and quantum wire defect parameters.

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Impact of Quantum Confinement and Defective Quantum Wire Parameters on the Creation of Electronic States in Periodic GaAs/AlGaAs Cylindrical Quantum Wire Structure

  • 会议论文

  • 发表日期：

    2025年

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  • S. Machichi,
  • M. R. Qasem,
  • T. Touiss,
  • F. Z. Elamri,
  • F. Falyouni,
  • D. Bria

摘要

This theoretical paper studies the creation of the electronic states within a periodic structure composed of two semiconducting cylindrical quantum wires (GaAs/AlGaAs) positioned between two substrates (GaAs). This structure includes a defective quantum wire located in the middle of the system. The analysis relies on the Schrödinger equation in cylindrical coordinates to calculate the eigen energies and associated wave functions. Solutions of the radial part take the form of Bessel functions, while the axial part of the analysis involves a combination of incident and reflected waves. By applying the boundary conditions, we obtain a transfer matrix which amplitudes provide the electronic transmission rate. Our results show that the emergence of localized states in bandgaps and the disappearance of passbands can be explained by taking into account the effect of quantum confinement and quantum wire defect parameters.