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This research work comprehensively investigates the performance characteristics of nanosheet field-effect transistors (FETs) employing transition metal dichalcogenides (TMDs) as channel materials. Molybdenum disulfide (MoS \(_2\) ), molybdenum diselenide (MoSe \(_2\) ), and molybdenum ditelluride (MoTe \(_2\) ) are all members of the transition metal dichalcogenide (TMD) family. These materials are captivating researchers due to their unique electronic properties. Each TMD offers a distinct combination of band gap, carrier mobility, and intrinsic qualities, making them ideal candidates for the development of 2D transistor channels. Leveraging simulations on Nanohub.org, we systematically explore the effects of varying gate lengths and dielectric materials, including HfO \(_2\) , Si \(_3\) N \(_4\) , and SiO \(_2\) , on device performance metrics. Specifically, we calculate the on-current ( \(I_\text {ON}\) ), off-current ( \(I_\text {OFF}\) ), and \(I_\text {ON}/I_\text {OFF}\) ratio to evaluate the transistor’s operational efficiency and switching behavior. Our findings reveal intricate relationships between gate length scaling, dielectric selection, and device performance, offering valuable insights for optimizing nanosheet FETs with TMD channels. This research contributes to advancing the understanding of nanoelectronic device design and paves the way for developing high-performance transistors for future technological applications.

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Principle Study of Nanosheet Field-Effect Transistors with Transition Metal Dichalcogenide Channel Materials

  • 会议论文

  • 发表日期：

    2025年

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  • Aruru Sai Kumar,
  • V. Bharath Sreenivasulu,
  • Srinivas Talasila,
  • Venkat Jukuru,
  • Thanvitha Valluru,
  • D. P. S. S. S. K. Vamsi

摘要

This research work comprehensively investigates the performance characteristics of nanosheet field-effect transistors (FETs) employing transition metal dichalcogenides (TMDs) as channel materials. Molybdenum disulfide (MoS \(_2\) ), molybdenum diselenide (MoSe \(_2\) ), and molybdenum ditelluride (MoTe \(_2\) ) are all members of the transition metal dichalcogenide (TMD) family. These materials are captivating researchers due to their unique electronic properties. Each TMD offers a distinct combination of band gap, carrier mobility, and intrinsic qualities, making them ideal candidates for the development of 2D transistor channels. Leveraging simulations on Nanohub.org, we systematically explore the effects of varying gate lengths and dielectric materials, including HfO \(_2\) , Si \(_3\) N \(_4\) , and SiO \(_2\) , on device performance metrics. Specifically, we calculate the on-current ( \(I_\text {ON}\) ), off-current ( \(I_\text {OFF}\) ), and \(I_\text {ON}/I_\text {OFF}\) ratio to evaluate the transistor’s operational efficiency and switching behavior. Our findings reveal intricate relationships between gate length scaling, dielectric selection, and device performance, offering valuable insights for optimizing nanosheet FETs with TMD channels. This research contributes to advancing the understanding of nanoelectronic device design and paves the way for developing high-performance transistors for future technological applications.