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This report does an analog/RF study on the proposed structure extended dual source dual gate TFET (EDSDG-TFET) structure. Two homogenous gates are used in this device's construction as part of the multi-source design, which significantly improves tunnelling while also boosting the performance metrics. Some DC analysis is done by varying device parameters like source length and no. of sources which helped for understanding the nature of analog/RF parameters of the proposed device. In Sentaurus TCAD, the required 2-D simulations for performance analysis are completed. The device offers a cut-off frequency (fT) of 18 MHz, a transconductance (gm) of 134 μS/m, and a gain bandwidth product (GBP) of 34.3 MHz after optimization which is 15 times the recent work. A comparison table of parameters of suggested structure with some other proposed TFET structures is also provided.

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Investigation of Analog/RF Characteristics in a Hybrid Extended-Dual Source Double-Gate Tunnel FET

  • 会议论文

  • 发表日期：

    2025年

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  • Kolluru Yashwanth,
  • Puja Ghosh

摘要

This report does an analog/RF study on the proposed structure extended dual source dual gate TFET (EDSDG-TFET) structure. Two homogenous gates are used in this device's construction as part of the multi-source design, which significantly improves tunnelling while also boosting the performance metrics. Some DC analysis is done by varying device parameters like source length and no. of sources which helped for understanding the nature of analog/RF parameters of the proposed device. In Sentaurus TCAD, the required 2-D simulations for performance analysis are completed. The device offers a cut-off frequency (fT) of 18 MHz, a transconductance (gm) of 134 μS/m, and a gain bandwidth product (GBP) of 34.3 MHz after optimization which is 15 times the recent work. A comparison table of parameters of suggested structure with some other proposed TFET structures is also provided.