Power electronics converters are the interface between the source side and the consumer side to convert electrical power in a controlled manner. Among all of the power electronics converters, three-phase voltage source inverters (VSI) are considered one of the prominent converters from an industrial point of view. However, these converters are often complicated to build due to the gate driver complexity, lack of proper isolation, the complexity in the gate pulse generation procedure, and many more. Even sometimes the gate pulse generation requires a tremendous amount of computational resources which increases the overall cost of the inverter. This paper introduces a novel methodology for implementing insulated gate bipolar transistor (IGBT) based three-phase VSI. IGBT is selected for the simulation and hardware construction due to the industrial perspective. Moreover, detailed gate driver circuits based on TLP250 and B1212S-1W dc-dc isolated converters are used for the construction of the VSI. The gate pulse generation for the VSI is kept simplified utilizing ATmega2560 microcontroller unit (MCU). The involvement of intricate analog gate driver circuits and the integration of multiple transformers are completely mitigated in this representation. The whole system of three-phase pulse width modulation (PWM) VSI is simulated in MATLAB/Simulink simulation environment while considering the 120° phase shifting mode. An efficient and robust laboratory prototype was built to validate the simulation claim, confirming the effectiveness and practical applicability of the PWM VSI.