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This paper primarily discusses the hybrid application technology of high-voltage SiC MOSFETs and IGBTs in high-power three-level, three-phase inverters. It thoroughly utilizes the high-frequency and low-loss features of the SiC devices and validates the characteristics of SiC MOSFETs and IGBTs under the hybrid application of SiC&Si through simulations and experimentations.

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Research on the Application of the High-Power SiC&Si Hybrid Three-Level Inverters

  • 会议论文

  • 发表日期：

    2025年

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  • Jiayi Wang,
  • Zikai Yi

摘要

This paper primarily discusses the hybrid application technology of high-voltage SiC MOSFETs and IGBTs in high-power three-level, three-phase inverters. It thoroughly utilizes the high-frequency and low-loss features of the SiC devices and validates the characteristics of SiC MOSFETs and IGBTs under the hybrid application of SiC&Si through simulations and experimentations.