High-voltage rectifier silicon stack is a key component of DC high-voltage generation system, which is composed of many silicon rectifier diodes in series, and its internal reverse voltage sharing is the key technology in the development of high-voltage rectifier silicon stack. The phenomenon of uneven reverse voltage distribution of high-voltage rectifier silicon stack is the most prominent at the ends. Firstly, the equivalent circuit of high-voltage rectifier silicon stack in reverse operation is established, the distribution law and influencing factors of reverse voltage in high-voltage rectifier silicon stack are analyzed, and the voltage sharing principle of high-voltage rectifier silicon stack is expounded. Then the simulation model of voltage sharing design of high voltage rectifier silicon stack is established, the reverse voltage distributions of high-voltage rectifier silicon stack at power frequency and high frequency are studied under three kinds of equal parameter voltage sharing measures of capacitance voltage sharing, resistance voltage sharing and resistance-capacitance voltage sharing and unequal parameter voltage sharing measure of end voltage sharing, and the effects of these voltage sharing measures on the voltage non-uniform coefficient and reverse leakage current of high-voltage rectifier silicon stack are analyzed. Finally, based on simulation results, according to the working conditions of DC high-voltage rectifier silicon stack in DC high-voltage generation system of the project of 2.5 MV accelerator neutron source prototype, the voltage sharing design scheme of rectifier silicon stack with working frequency of 120 kHz and withstanding reverse voltage of 200 kV is designed preliminarily, and the configuration parameters of voltage sharing devices of high-frequency and high-voltage silicon stack are obtained, which lays a theoretical foundation for the development of high-frequency and high-voltage rectifier silicon stack.