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This article comprehensively and deeply explores the characteristics and applications of wide bandgap GaN (GaN) devices, as well as related manufacturing technologies and development trends. Firstly, we systematically introduce the basic physical properties of wide bandgap GaN materials, including their high electron mobility, high thermal stability, and large bandgap width [1]. These characteristics give wide bandgap GaN devices unique advantages under extreme conditions such as high frequency, high power, and high temperature. In depth exploration was conducted on the manufacturing technology, device design, and manufacturing process of wide bandgap GaN devices. Although significant progress has been made in these areas in recent years, we still need to pay close attention to how to use them correctly in circuits.

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Application Research Based on Third-Generation Semiconductor Device GaN

  • 会议论文

  • 发表日期：

    2025年

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  • Kai Dong,
  • Xuejian Wang,
  • Zhenyu Zhao,
  • Mengfan Guo

摘要

This article comprehensively and deeply explores the characteristics and applications of wide bandgap GaN (GaN) devices, as well as related manufacturing technologies and development trends. Firstly, we systematically introduce the basic physical properties of wide bandgap GaN materials, including their high electron mobility, high thermal stability, and large bandgap width [1]. These characteristics give wide bandgap GaN devices unique advantages under extreme conditions such as high frequency, high power, and high temperature. In depth exploration was conducted on the manufacturing technology, device design, and manufacturing process of wide bandgap GaN devices. Although significant progress has been made in these areas in recent years, we still need to pay close attention to how to use them correctly in circuits.