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This article emphasizes the importance of thermal conductivity in the analysis of electrothermal-mechanical coupling behavior in Press-pack IGBTs, and highlights several deficiencies that can arise from neglecting or inaccurately considering thermal conductivity. These include inaccurate heat transfer simulation, misunderstanding of the electrothermal coupling mechanism, deviation in mechanical behavior simulation, and limitations in optimal design. To achieve a more precise analysis of the electrothermal-mechanical coupling behavior of Press-pack IGBTs and enhance their reliability under high-voltage and high-current conditions, future research must consider contact thermal conductivity as a pivotal factor. By taking into account the effects of materials, structures, and contact thermal conductivity holistically, we can establish a more comprehensive and accurate simulation model, providing stronger support for the design, optimization, and application of Press-pack IGBTs.

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Research on the Coupling Mechanism of Contact Thermal Conductivity in Press-Pack IGBT Electrical-Thermal-Mechanical Systems

  • 会议论文

  • 发表日期：

    2025年

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  • Kai Xiao,
  • Zhen Wang,
  • Xilin Yan,
  • Wenxiao Li,
  • Yechun Liu,
  • Ping Liu

摘要

This article emphasizes the importance of thermal conductivity in the analysis of electrothermal-mechanical coupling behavior in Press-pack IGBTs, and highlights several deficiencies that can arise from neglecting or inaccurately considering thermal conductivity. These include inaccurate heat transfer simulation, misunderstanding of the electrothermal coupling mechanism, deviation in mechanical behavior simulation, and limitations in optimal design. To achieve a more precise analysis of the electrothermal-mechanical coupling behavior of Press-pack IGBTs and enhance their reliability under high-voltage and high-current conditions, future research must consider contact thermal conductivity as a pivotal factor. By taking into account the effects of materials, structures, and contact thermal conductivity holistically, we can establish a more comprehensive and accurate simulation model, providing stronger support for the design, optimization, and application of Press-pack IGBTs.