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Fast charging of batteries in electric vehicles (EVs) is becoming very crucial nowadays. For fast chargers, the AC-DC and DC-DC converters play a crucial role. In this article, we explore a 2.4 kW, 100 kHz bidirectional DC power converter appropriate for fast charging of electric vehicles that uses SiC MOSFETs as well as SiC Schottky diodes. SiC devices are very sensitive to dead time, which influences the junction temperature and power losses. The dead time of the converter varies from 50 ns to 1000 ns. Power losses along with peak junction temperature of SiC MOSFET increase with the increase in dead time. An increase in power loss of 1.52 W increases the junction temperature of the SiC MOSFET by 0.7 °C. The optimum dead time is found to be 500 ns.

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Effect of Dead Time on SiC MOSFET Junction Temperature in DC-DC Converters for Electric Vehicles

  • 会议论文

  • 发表日期：

    2025年

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  • Femi Robert,
  • P. Uma Sathyakam,
  • A. Amalin Prince

摘要

Fast charging of batteries in electric vehicles (EVs) is becoming very crucial nowadays. For fast chargers, the AC-DC and DC-DC converters play a crucial role. In this article, we explore a 2.4 kW, 100 kHz bidirectional DC power converter appropriate for fast charging of electric vehicles that uses SiC MOSFETs as well as SiC Schottky diodes. SiC devices are very sensitive to dead time, which influences the junction temperature and power losses. The dead time of the converter varies from 50 ns to 1000 ns. Power losses along with peak junction temperature of SiC MOSFET increase with the increase in dead time. An increase in power loss of 1.52 W increases the junction temperature of the SiC MOSFET by 0.7 °C. The optimum dead time is found to be 500 ns.