In this study, the performance analysis of an L-shaped Tunnel Field-Effect Transistor (TFET) is reported, and its electrical characteristics are examined using Silvaco TCAD device simulator. The L-shaped TFET is specifically designed to ensure that the tunneling current is dominant in the direction perpendicular to the gate. To address the issue of electric field crowding causing corner tunneling near the source region, the proposed L-shaped TFET incorporates drain doping (p +− doping for n-type operations). By strategically doping the drain region, the Ion/Ioff current ratio of the transistor is significantly enhanced by a factor of 109, with corner tunneling playing a major role in improving the switching characteristics. Drain doping demonstrates promising electrical characteristics highlighting its potential for enhancing performance in various applications. Optimization of the concentration of drain doping provides an effective approach to improve the transistor's switching behavior and achieve overall better performance.