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This chapter systematically reviews the advancements in MOCVD-grown AlN epitaxial layers, focusing on dislocation density control strategies. The variable growth mode technique, including two-step and multistep processes, promotes dislocation bending through modulated V/III ratios and temperature cycles, reducing dislocation densities. Pulsed MOCVD methods like NH3-interrupted epitaxy and migration-enhanced growth enhance adatom mobility, reducing XRC FWHM. Nano-patterned sapphire substrates with optimized hole diameters demonstrate superior performance, enabling atomically smooth surfaces and dislocation densities approaching 3×10⁸ cm⁻². Buffer layer annealing at 1650-1700°C in N2–CO atmosphere improves AlN crystal quality, decreasing (0002) XRC FWHM to 16 arcsec. Comparative analysis reveals tradeoffs between growth techniques, where NPSS combined with pulsed epitaxy achieves the lowest defect density. These developments establish a framework for cost-effective AlN templates compatible with industrial-scale UV optoelectronics and power device fabrication.

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Preparation of AlN Single Crystal Thin Film by Metal Organic Chemical Vapor Deposition

  • 章节

  • 发表日期：

    2025年

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  • Ke Xu,
  • Jun Huang

摘要

This chapter systematically reviews the advancements in MOCVD-grown AlN epitaxial layers, focusing on dislocation density control strategies. The variable growth mode technique, including two-step and multistep processes, promotes dislocation bending through modulated V/III ratios and temperature cycles, reducing dislocation densities. Pulsed MOCVD methods like NH3-interrupted epitaxy and migration-enhanced growth enhance adatom mobility, reducing XRC FWHM. Nano-patterned sapphire substrates with optimized hole diameters demonstrate superior performance, enabling atomically smooth surfaces and dislocation densities approaching 3×10⁸ cm⁻². Buffer layer annealing at 1650-1700°C in N2–CO atmosphere improves AlN crystal quality, decreasing (0002) XRC FWHM to 16 arcsec. Comparative analysis reveals tradeoffs between growth techniques, where NPSS combined with pulsed epitaxy achieves the lowest defect density. These developments establish a framework for cost-effective AlN templates compatible with industrial-scale UV optoelectronics and power device fabrication.