Crystallinity-Induced Variation of the Strength of Electroplated Copper Thin Film in Through Silicon Vias Interconnection Structure
摘要
As integrated circuits develop towards higher integration and miniaturization, the diameter of single micro-interconnection structure has approached the scale of several nanometers, which means consist of only one or a few crystals in a cross-section. In such microscopic scale, some problems start to emerge. In this study, a micro-tensile test method based on the FIB system was developed and the strength of copper thin film samples were measured. The crystallinity was quantitatively determined by applying IQ values obtained from EBSD analysis. Multiple single-crystal copper and bicrystal copper specimens were used for tensile testing. By establishing a curve between the strength and IQ value of these copper samples, it was found that the strength of microscopic copper samples did not change with the IQ value monotonically. A degree of crystallinity that may meant the mechanical properties reach a criticality were realized, which would provide a basis for controlling the reliability of TSV copper interconnection structure.