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In this chapter, the large signal response of AlGaN/GaN HEMT device is presented. Input signal of 10 GHz is considered to investigate the DC and RF performance of the device. The output power, power gain and amplification efficiency have been extracted from transient analysis. Response of the device to high-frequency signals is presented in detail by varying the signal frequency up to 90 GHz. Physics-based modelling has been chosen to perform the simulations using TCAD tool Silvaco. The results can be significantly useful as the GaN HEMT device is frequently utilized for high-frequency and high-power applications.

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Large Signal Modelling of GaN HEMTs

  • 章节

  • 发表日期：

    2025年

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  • Devika Jena,
  • Sanghamitra Das,
  • Aruna Tripathy,
  • Taraprasanna Dash

摘要

In this chapter, the large signal response of AlGaN/GaN HEMT device is presented. Input signal of 10 GHz is considered to investigate the DC and RF performance of the device. The output power, power gain and amplification efficiency have been extracted from transient analysis. Response of the device to high-frequency signals is presented in detail by varying the signal frequency up to 90 GHz. Physics-based modelling has been chosen to perform the simulations using TCAD tool Silvaco. The results can be significantly useful as the GaN HEMT device is frequently utilized for high-frequency and high-power applications.