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Negative Capacitance (NC)-based devices are receiving discernible attention in the present scenario because of their unmatchable performance. The extent of the performance of ferroelectric (FE) based NC FinFETs depends highly upon the capacitance matching, which is a burning research challenge to achieve. This work incorporates a stack of double layers of different FE materials within the oxide region instead of conventional single-layered FE material for further capacitance matching. Combining two different FE layers broadens the scope for the Landau-Khalatnikov (L-K) parameters, leading to better capacitance matching through appropriate parametric tuning. The proposed method is validated using Synopsys TCAD Sentaurus tool. The proposed device outperforms the conventional single-layered FE-based devices in terms of subthreshold swing, drain voltage, switching speed, power dissipation, etc. Further, the double-layered FE device with different materials (FE1+FE2) can serve as a prototype in advancing the NC-based devices to commercially viable technology through its scaling attributes along with better device performance.

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Demonstration of Doped-HfO2 Ferroelectric Based Double Layer Stacked NC FinFET

  • 会议论文

  • 发表日期：

    2025年

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  • Mohd. Shakir,
  • Rajeewa Kumar Jaisawal,
  • Navjeet Bagga,
  • P. N. Kondekar,
  • Koushik Dutta

摘要

Negative Capacitance (NC)-based devices are receiving discernible attention in the present scenario because of their unmatchable performance. The extent of the performance of ferroelectric (FE) based NC FinFETs depends highly upon the capacitance matching, which is a burning research challenge to achieve. This work incorporates a stack of double layers of different FE materials within the oxide region instead of conventional single-layered FE material for further capacitance matching. Combining two different FE layers broadens the scope for the Landau-Khalatnikov (L-K) parameters, leading to better capacitance matching through appropriate parametric tuning. The proposed method is validated using Synopsys TCAD Sentaurus tool. The proposed device outperforms the conventional single-layered FE-based devices in terms of subthreshold swing, drain voltage, switching speed, power dissipation, etc. Further, the double-layered FE device with different materials (FE1+FE2) can serve as a prototype in advancing the NC-based devices to commercially viable technology through its scaling attributes along with better device performance.