The impact of CdS QDs on memory effect in Smectic A (SmA) phase of liquid crystal, namely, 4-cyano-4′-octylbiphenyl (8CB) is investigated by measuring dielectric permittivity at 0 V (OFF)-40 V (ON)-0 V (OFF) using frequency-bias-dependent dielectric spectroscopy. In SmA phase of pure 8CB, after the removal of 40 V, neither the dielectric permittivity (ε′) holds the value at 40 V nor returns to the value at 0 V even up to 5 h eventually confirms the memory effect (i.e. memory state). However, the quality of memory state is found to deteriorate over time as ε′ is reduced by ~17% and 25% in case of just after removal of 40 V and after 5 h, respectively, as compared to the value at 40 V. To improve the memory effect, 0.25 wt% CdS QDs are doped into 8CB. Our results affirm the significant improvement in memory effect of SmA phase of 0.25 wt% composite as the decrease in ε′ becomes ~1.9% (just after removal of 40 V) and 9% (after 5 h), respectively, as compared to the value at 40 V. Such enhanced memory effect could be attributed to the holding of smectic layer orientation at 40 V bias by the dopant CdS QDs for longer duration even after the removal of applied bias voltage. A point to be noted here that no memory effect is observed in nematic phase of pure 8CB and 0.25 wt% CdS QDs-8CB composite. We anticipate the use of such composite in the fabrication of tunable soft memory devices.