In this work, we propose a novel normally-off GaN Superjunction Negative Capacitance HEMT (SJNCHEMT) with a recessed intrinsic GaN (i-GaN) layer, aiming to enhance device performance in terms of subthreshold swing (SS), threshold voltage (Vth), ON/OFF current ratio, transconductance (gm) and ON-resistance (RON). The combination of the superjunction (SJ) structure and negative capacitance (NC) effect has been employed to optimize device characteristics. The SJ structure enables effective charge balancing, improving breakdown voltage, while the NC effect enhances electrostatic control, reducing SS. The recessed i-GaN layer further contributes to achieving normally-off operation by modulating the threshold voltage. Through simulation the proposed SJNCHEMT demonstrates significant improvement over conventional SJHEMTs. For an SJ depth (h) of 35 nm, at VDS = 10 V we observe an ION of 115 mA/mm, a positive Vth of 0.4 V, and a subthreshold swing of 61 mV/dec, along with a high ON/OFF current ratio of 3.21 × 1010. These results represent a major advancement in GaN-based HEMT technology, offering a promising pathway for high-power, high-frequency applications. The findings suggest that recessed i-GaN SJNCHEMTs can achieve normally-off operation with enhanced performance, making them a strong candidate for next-generation power electronics.