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This study conducts a comprehensive numerical analysis of Oxygen-induced single-event transients in InAs quantum-well N-MOSFET with raised source/drain structure. With a focus on the biasing condition (VGT) ranging from −0.2 V to 0.2 V, the research assesses total collected charge, collection efficiency and recovery time. Notably, the device when biased beyond threshold exhibits superior radiation resilience and reduced device degradation.

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Study of Single Event Transient Effect on InAs Quantum Well N-MOSFET Under Varied Biasing Conditions

  • 会议论文

  • 发表日期：

    2026年

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  • Sumedha Dasgupta,
  • Chandrima Mondal,
  • Abhijit Biswas

摘要

This study conducts a comprehensive numerical analysis of Oxygen-induced single-event transients in InAs quantum-well N-MOSFET with raised source/drain structure. With a focus on the biasing condition (VGT) ranging from −0.2 V to 0.2 V, the research assesses total collected charge, collection efficiency and recovery time. Notably, the device when biased beyond threshold exhibits superior radiation resilience and reduced device degradation.