Blue and Green Laser Diodes for Cinema Projectors
摘要
This paper reports the latest device performance of high-power blue and green edge-emitting laser diodes (LDs) for cinema projectors. The Gallium Nitrides based epitaxial layers of LDs were grown by metal organic chemical vapor deposition (MOCVD). Fabricated every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A new developed 465 nm blue LD showed the optical output power, the voltage and the wall-plug efficiency (WPE) of 6.57 W, 3.86 V and 48.7% at the forward current of 3.5 A under continuous wave (CW) operation. The peak WPE of the 465 nm LD was 50.0 % at the forward current of 2.3 A. And our developed 525 nm green LD showed the optical output power, the voltage and the WPE of 1.97 W, 4.12 V and 25.2 % at the forward current of 1.9 A under CW operation. The peak WPE of the 525 nm LD was 26.4 % at the forward current of 1.2 A.