Thin Film Transistors (TFTs) are increasingly used in display products, but their limitations include high-temperature processing, carrier mobility, lower ON/OFF ratio, device mobility, and thermal stability. Carbon nanotubes (CNTs) are a promising semiconductor material for TFT devices due to their one-dimensional structure and exceptional characteristics. This research work has designed, modelled, and optimized CNT-TFTs using the nanonet tool, resulting in superior results compared to existing devices. The fabricated devices produce about 1.3 nA, which is within the practical range of operating TFTs reported previously. Research in transistor technology focuses on improving transistor performance with reduced dimensions, with scaling and mobility being major factors. By replacing silicon-based transistors’ channel material with high-mobility materials like carbon nanotubes, scaling limitations are eliminated. CNT-TFTs are ideal for drivers in contemporary FPD systems, as they maintain a safe operating temperature while providing high driving current. The study investigated the effect of carbon nanotube physical parameters on the current performance of CNT-TFTs. Findings showed that operating in short channel mode allows the device to display maximum current scaling, and the current is more dependent on ratio than LS. The orientation angle should be fixed at 30° or 60°, and further guidelines and limitations are discussed for future efficient device fabrication.