Surface activated bonding is a crucial room-temperature bonding technology, particularly for bonding substrates in surface acoustic wave filters, with potential applications in three-dimensional semiconductor integration. This technique enables the bonding of materials with different linear expansion coefficients without requiring heating or cooling stages. However, the fast atom beam sources used in surface activated bonding still face significant challenges. After several hundred uses, internal wear caused by argon ion sputtering leads to particle emission from the irradiation port, resulting in voids at the bonding interface and subsequent bonding defects. Previously, in-process measurement of carbon particles was not feasible. However, recent advancements in automating particle emission measurements have made it possible to evaluate particle emissions in real time. This study represents a significant advancement in in-process measurement techniques, enabling the detection of even smaller particles that were previously undetectable. These improved detection capabilities provide valuable insights into the particle emission mechanisms of fast atom beam sources and have important implications for their future adaptation in three-dimensional semiconductor integration, highlighting key challenges that must be addressed.