In this investigation, we’ll examine how one-dimensional (1-D) field-effect transistors will be potentially applicable in future very large-scale integration (VLSI) technologies. At the 45-nm technology node, we present the design and analysis of triple-cascode operational transconductance amplifiers (TCOTAs) constructed of metal oxide semi-conductor field effect transistors (MOSFETs) as well as carbon nano-tube field effect transistors (CNTFETs). The suggested architectures use both conventional MOSFETs and CNTFETs devices. The published simulation analysis of the TCOTAs shows that the proposed CNTFET-based devices perform significantly better than traditional ones. The DC gain, Speed, and PDP (Power-Delay Product) of the proposed CNTFET-based device, as well as the hybrid-based device, have all been found to greatly outperform those of conventional CMOS devices. Furthermore, the operational performance of proposed CNT-based TCOTAs is investigated by altering CNT’s diameters. We also emphasize 1-D material-based transistors’ potential uses in conventional nanoelectronics, energy-efficient low-voltage analog mixed-signal circuits, and future interconnect technologies.