In order to enhance the conversion efficacy for N-type MoS2/P-type c-Si solar cell, the AMPS-1D program, which was developed by Pennsylvania State University, was utilized to model the effect of front-to-back contact minority carrier recombination velocity. The simulation results manifest that for N-type MoS2/P-type c-Si solar cell without a back surface field, the photovoltaic performance is greatly affected by the back contact minority carrier recombination velocity, but is unaffected by the front contact velocity. As the recombination velocity of minority carriers on back contacts rose from 100 to 107 cubic centimeters per second, the cell’s conversion efficiency fell from 26.813 to 17.617%. After the rear surface field is raised, the photovoltaic performance of the cell is almost unaffected by the front and rear contact minority carrier recombination velocities.