Effect of Annealing on the Absorbance of MoS2 Thin Films Deposited on ITO Substrate by RF Sputtering Technique
摘要
In this paper, we have reported the deposition of MoS2 thin films by the RF sputtering method and the effect of annealing on the absorbance curve of the MoS2 thin films. The XRD (X-ray diffraction) plot shows polycrystalline nature in the growth of above MoS2 thin films. The absorbance curve for the annealed and the non-annealed MoS2 layers has obtained by using a UV–VIS-NIR spectrometer. It is observed that for annealed MoS2 layers the absorption of light is better than the non-annealed MoS2 layers.