Design and Analysis of Dual Metal Double Gate Charge Plasma Based Junctionless MOS Transistor for Biosensing Applications
摘要
In this paper Dual Metal Double Gate Charge Plasma Junctionless Transistor (DM-DG-CPJLT) is used for sensing the biomolecules. In this device, Gate work function and charge plasma technology have been used to improve sensitivity and reduce the off current of the designed biosensor. The maximum ON current is achieved with a high-k gate dielectric. It has been investigated how the presence of charged and neutral proteins in the cavities affects electrical properties such as energy band, surface potential, and electric field. ON current of the suggested device is better, and it is in the order of 10–4 A/µm, the off current is in the order of 10–17 A/µm, and the ON/OFF current ratio is in the order of 1013. For Dielectric constant K = 12 and K = 2, the threshold voltage was found to be Vth = 0.61 V and Vth = 0.73 V respectively. Additionally, various performance metrics for the proposed device, including the subthreshold swing of 63.1 mv/decade, DIBL of 18 mV/V, and surface potential, are being investigated. To investigate the performance of the biosensor, the cavity length and dielectric constant are also varied. With a shorter cavity, the OFF current decreases. As a result, a greater ON/OFF current ratio was observed for shorter cavity lengths. Additionally, it is inferred that the pre-occupation with high-K protein biomolecules in the cavity region increases the sensitivity of the biosensor.