As the world is moving towards electrified transportation with zero carbon footprints, electric motorcycles emerge as the first choice for consumers to transition from conventional vehicles. Still, their limited range per battery charge is a huge barrier towards their adoption. As silicon-based semiconductors have reached their theoretical limits in terms of performance, newly emerging Wide Bandgap (WBG) semiconductors provide a promising way to develop highly efficient power converters for EVs. To address this, the study proposed a Gallium Nitride-based traction drive for electric motorcycle applications, and field-oriented control is implemented for motor speed control. The efficiency of the proposed motor drive control is compared with the Si-MOSFET-based motor drive. It has been found that not only GaN traction inverters outperform the Si-MOSFETs in performance, but their efficiency at high switching frequencies is approximately 12% higher than the efficiency of Si-MOSFET at lower switching frequencies. Moreover, the controlled motor speed demonstrated high oscillations at lower switching frequencies, which could cause higher motor losses or even malfunction of the traction motor.