The ternary semiconductor compound cadmium sulpho selenide (CdSSe) is an excellent material of the IIB-VIA group having potential applications in photovoltaic cells, sensors, and LEDs, as well as in many opto-electronic devices. Uniform, good-quality, and polycrystalline CdSSe thin films were deposited using a facile chemical bath deposition (CBD) method onto commercial soda-lime glass substrates. The deposition duration for the films was maintained at 60 min, 120 min, and 180 min, respectively. For the deposited films, X-ray diffraction (XRD) patterns depicted that the crystallites in the films exhibited hexagonal phase structure with preferred orientation along the (002) axis direction. An increase in the XRD peak intensities of the films was observed with the increase of deposition duration. Scanning electron microscopy (SEM) images showed the presence of micro-fibrous structure in the films with the appearance of spherical nano grains with the increment of deposition duration. The bath deposition temperature during the CBD process was maintained at 75 ± 2 °C. Optical measurements of absorbance and transmittance were obtained and studied using the UV–Vis spectroscopy technique. The optical band gap values for the films were estimated from the absorbance spectra. Fourier-transform infrared (FTIR) analysis divulged the presence of CdS and CdSe bonds in the deposited films.