The pioneering work in nitride semiconductors was developed in the 1980s based on heteroepitaxial technology. The GaN-based quantum structures of heteroepitaxy realized the manufacture of efficient blue light-emitting diodes. This work was completed by three Japanese professors: Akasaki Isamu, Amano Hiroshi, and Nakamura Shuji, and was awarded the Nobel Prize in Physics in 2014. Today, GaN and its alloys with indium and aluminum have become the basic materials for manufacturing optoelectronic devices such as light-emitting diodes and laser diodes. In addition, GaN is also suitable for high-frequency and high-power electronic devices due to its wide bandgap, high carrier mobility, high breakdown strength, and thermal conductivity. Currently, most GaN-based devices are prepared by epitaxial growth on hetero-substrates (such as: sapphire, silicon, or silicon carbide).