Halide-based perovskites have proved to be a promising semiconducting material for potentially economical and high-performance optoelectronic devices such as solar cells and light-emitting diodes. While perovskite-based solar photovoltaic devices exhibit outstanding photovoltaic performance exceeding a power conversion efficiency of 26%, their commercial application is limited by their poor environmental stability. Hence, improving their lifetime is a very important research problem. Studies show that among many possible factors that govern the stability and device lifetimes, thin-film strain has been found as a key parameter governing the device's efficiency and stability in the long term. The strain developed during the film’s crystallisation and growth provides a driving force for the formation of defects in the film. These defects act as non-radiative recombination sites for the charge carriers and ultimately result in lowering the device's performance and stability. This article sheds light on several strain compensation strategies adopted for managing defects and eliminating losses in halide perovskite thin films for solar cell applications.