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This research explores the fabrication of NiO-based (NiO/Co/Zn) thin films and examines the influence of annealing on their structural and electrical characteristics. The films were deposited on glass substrates using the E-Beam technique and subjected to vacuum annealing at 400 °C to analyze the annealing effects. X-ray diffraction (XRD) analysis confirmed the formation of the NiO phase, displaying peaks associated with cubic NiO. A decrease in crystallite size post-annealing indicates that the annealing process improved the crystallite structure. Scanning electron microscopy (SEM) revealed a uniform surface morphology with spherically shaped nanocrystalline grains. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of NiO, Co, and Zn elements in the films. I-V characterization exhibited nonlinear behavior, indicating semiconducting properties. The annealed films demonstrated a notable rise in current, suggesting enhanced conductivity. These findings suggest that annealing plays a crucial role in improving both the structural and electrical properties of NiO/Co/Zn thin films, making them suitable for applications in resistive switching and sensing technologies.

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Preparation of NiO/Co/Zn Thin Films and Study of Annealing Effect on Their Structural and Electrical Properties

  • 会议论文

  • 发表日期：

    2025年

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  • Dhara Singh Meena,
  • Arjun Kumawat,
  • Ved Prakash Meena,
  • Prashant Meena,
  • Harish Mahla,
  • Pavan Kumar Meena,
  • Madhu Yadav,
  • Chhagan Lal,
  • M. K. Jangid

摘要

This research explores the fabrication of NiO-based (NiO/Co/Zn) thin films and examines the influence of annealing on their structural and electrical characteristics. The films were deposited on glass substrates using the E-Beam technique and subjected to vacuum annealing at 400 °C to analyze the annealing effects. X-ray diffraction (XRD) analysis confirmed the formation of the NiO phase, displaying peaks associated with cubic NiO. A decrease in crystallite size post-annealing indicates that the annealing process improved the crystallite structure. Scanning electron microscopy (SEM) revealed a uniform surface morphology with spherically shaped nanocrystalline grains. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of NiO, Co, and Zn elements in the films. I-V characterization exhibited nonlinear behavior, indicating semiconducting properties. The annealed films demonstrated a notable rise in current, suggesting enhanced conductivity. These findings suggest that annealing plays a crucial role in improving both the structural and electrical properties of NiO/Co/Zn thin films, making them suitable for applications in resistive switching and sensing technologies.