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The semiconductor’s elaboration is a very important stage of optoelectronic devices. In this study, an elaboration of CdS semiconductor is made via Chemical Bath Deposition (CBD) method. The structural, morphological and optical properties of pure CdS are investigated with various characterization techniques: X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) coupled with energy dispersive X-ray (EDX), and UV-Visible spectroscopy. The XRD of elaborated CdS layers exhibits polycrystalline nature with high perfectional orientation at (002) plan which demonstrated good CdS crystallinity. The SEM images of the produced CdS demonstrate the formation of material on glass with good morphological properties: continuous, rough, and granular surfaces. The EDX analysis confirmed the near stochiometric composition of CdS thin layers validating the successful formation of the CdS compound. The balanced presence of cadmium and sulfur enhances the material’s quality and purity. The UV- visible characterization of the CdS thin layers deposited from all three cadmium precursors exhibited good transmission behavior in the visible wavelength ranged between 60 and 80%. The bandgap energy values were ranged between 2.37 and 2.40 eV, respectively which prove the semiconducting properties of CdS. These investigations discover that the properties of CdS can be adjusted by precursors and annealing temperature effects. It seems that the process of chemical bath deposition provides a facile way to control the quality of CdS thin layers.

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The Effect of Experimental Process on CdS Thin Layers Properties Nanostructured by Chemical Bath Deposition for Optoelectronic Application

  • 会议论文

  • 发表日期：

    2025年

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  • Salma Smairi,
  • Abdelkrim Batan,
  • Bouchaib Hartiti,
  • Youssef Doubi,
  • Ahmed Ziti,
  • Mohamed Azrour,
  • M.’ Barek Azdouz,
  • Philippe Thevenin

摘要

The semiconductor’s elaboration is a very important stage of optoelectronic devices. In this study, an elaboration of CdS semiconductor is made via Chemical Bath Deposition (CBD) method. The structural, morphological and optical properties of pure CdS are investigated with various characterization techniques: X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) coupled with energy dispersive X-ray (EDX), and UV-Visible spectroscopy. The XRD of elaborated CdS layers exhibits polycrystalline nature with high perfectional orientation at (002) plan which demonstrated good CdS crystallinity. The SEM images of the produced CdS demonstrate the formation of material on glass with good morphological properties: continuous, rough, and granular surfaces. The EDX analysis confirmed the near stochiometric composition of CdS thin layers validating the successful formation of the CdS compound. The balanced presence of cadmium and sulfur enhances the material’s quality and purity. The UV- visible characterization of the CdS thin layers deposited from all three cadmium precursors exhibited good transmission behavior in the visible wavelength ranged between 60 and 80%. The bandgap energy values were ranged between 2.37 and 2.40 eV, respectively which prove the semiconducting properties of CdS. These investigations discover that the properties of CdS can be adjusted by precursors and annealing temperature effects. It seems that the process of chemical bath deposition provides a facile way to control the quality of CdS thin layers.