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In recent years, CZTS thin-film solar cells have been trying to emerge thanks to excellent technological and environmental properties. If the performance of these solar cells is confirmed, they could become major players in the solar energy market in the years to come. While many investigations have implemented quite a few solutions to improve the performance of this technology, the conversion efficiency of the solar cell remains remarkably low compared to other technologies. Understanding the factors that limit performance is therefore essential to advance cells in kesterite. In this work, by a simulation study with SCAPS-1D software, we show that in CZTS thin-film solar cells, the increased performance reduction is attributed to low carrier concentrations and high defect concentrations. The results gave a range of permissible values of the total defect density. In this area delimited by 1010 and 1014 cm−3, we obtain an open circuit voltage of 874 mV, a short circuit density of 25 mA/cm2, a conversion efficiency of about 17% and a filling factor of 76%. This information will allow us to think about the type of absorber doping in further work while avoiding the increase in the defect density.

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An Insight into the Total Defect Density in CZTS on the Performance of Kesterite Solar Cells

  • 会议论文

  • 发表日期：

    2025年

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  • Mondjou Georges Constant Beh,
  • Bouchaib Hartiti,
  • Konan Kouadio Fransisco,
  • Cisse Théodore Haba,
  • Ahmed Ziti,
  • Abdelkrim Batan,
  • Philippe Thevenin

摘要

In recent years, CZTS thin-film solar cells have been trying to emerge thanks to excellent technological and environmental properties. If the performance of these solar cells is confirmed, they could become major players in the solar energy market in the years to come. While many investigations have implemented quite a few solutions to improve the performance of this technology, the conversion efficiency of the solar cell remains remarkably low compared to other technologies. Understanding the factors that limit performance is therefore essential to advance cells in kesterite. In this work, by a simulation study with SCAPS-1D software, we show that in CZTS thin-film solar cells, the increased performance reduction is attributed to low carrier concentrations and high defect concentrations. The results gave a range of permissible values of the total defect density. In this area delimited by 1010 and 1014 cm−3, we obtain an open circuit voltage of 874 mV, a short circuit density of 25 mA/cm2, a conversion efficiency of about 17% and a filling factor of 76%. This information will allow us to think about the type of absorber doping in further work while avoiding the increase in the defect density.