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To achieve high power conversion efficiency (PCE) and long-term stability, the incorporation of titanium dioxide (TiO₂) as an electron transport layer (ETL) in perovskite solar cells (PSCs) is of paramount importance. However, challenges remain to reduce interface defect density (IF) to minimize recombination, and to optimize band gap and electron affinity values to properly tune band energy. The present study examined the impact of TiO₂ on HTL-free solar cells based on perovskites, including CsSnI₃, CH₃NH₃Pb1-x EuxI₃, and CH₃NH₃SnI₃. The high-power conversion efficiency (PCE) of 15.12% and 14.62% is achieved by the use of CH3NH3SnI3 and CsSnI3, respectively. Furthermore, the investigation of the TiO₂/perovskites interface defect densities revealed that the optimal value corresponded to low defect densities of 1010 cm−3, which was achieved with a high PCE of 25% using CsSnI₃. The bandgap and electron affinity effect primarily enhances the power conversion efficiency, with the highest values observed for CH3NH3Pb1-xEuxI3, CH3NH3SnI3, and CsSnI3, which reached 15.7%, 18.12%, and 28.15%, respectively.

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Numerical Investigation and Optimization of TiO₂ as an ETL in HTL-Free Perovskite Solar Cells with Various Absorbers

  • 会议论文

  • 发表日期：

    2025年

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  • Nabil Bouri,
  • Latifa Znaidi,
  • Ahmed Rmili,
  • Mounir Fahoume,
  • Khalid Nouneh

摘要

To achieve high power conversion efficiency (PCE) and long-term stability, the incorporation of titanium dioxide (TiO₂) as an electron transport layer (ETL) in perovskite solar cells (PSCs) is of paramount importance. However, challenges remain to reduce interface defect density (IF) to minimize recombination, and to optimize band gap and electron affinity values to properly tune band energy. The present study examined the impact of TiO₂ on HTL-free solar cells based on perovskites, including CsSnI₃, CH₃NH₃Pb1-x EuxI₃, and CH₃NH₃SnI₃. The high-power conversion efficiency (PCE) of 15.12% and 14.62% is achieved by the use of CH3NH3SnI3 and CsSnI3, respectively. Furthermore, the investigation of the TiO₂/perovskites interface defect densities revealed that the optimal value corresponded to low defect densities of 1010 cm−3, which was achieved with a high PCE of 25% using CsSnI₃. The bandgap and electron affinity effect primarily enhances the power conversion efficiency, with the highest values observed for CH3NH3Pb1-xEuxI3, CH3NH3SnI3, and CsSnI3, which reached 15.7%, 18.12%, and 28.15%, respectively.