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Due to their high switching speed and low switching losses, silicon carbide (SiC) power semiconductors are critical components in the power switching of solid-state circuit breakers (SSCBs). However, the combination of high di/dt and system inductance leads to stray inductance in the PE switches and MOV loops, causing voltage overshoot oscillations that significantly impact the performance of sensitive semiconductor devices. SSCBs are essential for protecting medium- and low-voltage DC systems, providing a highly effective means of isolating short-circuit faults. As such, incorporating voltage-clamp elements into SSCBs is crucial. This paper analyzes and compares the characteristics of existing snubber branches, such as RC and RCD circuits, and proposes two high-performance snubber designs: the C-MOV and clamped RCD branches. Simulation results illustrate the differences among these snubber circuits, guiding the selection of the most suitable snubber for SSCB applications.

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Research Improvement and Optimization of Snubber Circuit in Single Gate-Driven Solid-State Circuit Breaker Based on SiC Device

  • 会议论文

  • 发表日期：

    2025年

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  • Wenxin Zhang,
  • Peichao Xu,
  • Huiqing Wen

摘要

Due to their high switching speed and low switching losses, silicon carbide (SiC) power semiconductors are critical components in the power switching of solid-state circuit breakers (SSCBs). However, the combination of high di/dt and system inductance leads to stray inductance in the PE switches and MOV loops, causing voltage overshoot oscillations that significantly impact the performance of sensitive semiconductor devices. SSCBs are essential for protecting medium- and low-voltage DC systems, providing a highly effective means of isolating short-circuit faults. As such, incorporating voltage-clamp elements into SSCBs is crucial. This paper analyzes and compares the characteristics of existing snubber branches, such as RC and RCD circuits, and proposes two high-performance snubber designs: the C-MOV and clamped RCD branches. Simulation results illustrate the differences among these snubber circuits, guiding the selection of the most suitable snubber for SSCB applications.