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In this paper, a high silicon microring modulator (Si-MRM) based intensity modulation direct detection (IM/DD) systems that enabled by probabilistic shaping (PS) is demonstrated by simulation for the first time. The adopted probabilistic shaping method uses constant component distribution matching to transform uniformly distributed amplitude points into a unilateral Maxwell–Boltzmann distribution. The system is implemented by co-simulation between Matlab and VPI Transmission Maker, probabilistic shaping pulse amplitude modulation 4 (PS-PAM4) signal is used. The simulation results demonstrate that by adopting PS in the system, a 1.02 dB maximum receiver sensitivity improvement can be obtained at bit error rate (BER) of 3.8 × 10–3 compared to the case without employing PS. This study shows the performance improvement potential of PS technology in the scenario of Si-MRM based IM/DD systems.

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High Sensitivity Silicon Microring Modulator Based IM/DD System Enabled by Probabilistic Shaping

  • 会议论文

  • 发表日期：

    2025年

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  • Junxiong Tan,
  • Yu Sun,
  • Junde Lu,
  • Jie Shi,
  • Lanling Chen,
  • Jianyu Shi,
  • Jiaxin Zheng,
  • Jun Qin,
  • Yueqin Li,
  • Jian Sun

摘要

In this paper, a high silicon microring modulator (Si-MRM) based intensity modulation direct detection (IM/DD) systems that enabled by probabilistic shaping (PS) is demonstrated by simulation for the first time. The adopted probabilistic shaping method uses constant component distribution matching to transform uniformly distributed amplitude points into a unilateral Maxwell–Boltzmann distribution. The system is implemented by co-simulation between Matlab and VPI Transmission Maker, probabilistic shaping pulse amplitude modulation 4 (PS-PAM4) signal is used. The simulation results demonstrate that by adopting PS in the system, a 1.02 dB maximum receiver sensitivity improvement can be obtained at bit error rate (BER) of 3.8 × 10–3 compared to the case without employing PS. This study shows the performance improvement potential of PS technology in the scenario of Si-MRM based IM/DD systems.