Manufacturing optomechanical sensors on Silicon-On-Insulator (SOI) substrates often results in waveguide collapse due to the complete etching of the top silicon layer, which exposes the underlying silica to hydrofluoric acid. Alternatives involve using materials resistant to hydrofluoric acid to protect the silicon waveguide, complicating the process and hindering MEMS fabrication compatibility. This study introduces an innovative ridge waveguide design that maintains a 500 nm silicon layer with 400 nm etched on each side, effectively shielding the silica layer and preventing waveguide collapse. This approach simplifies the manufacturing process and ensures compatibility with the MEMS platform. Simulations, using a 2 um spot diameter tapered fiber lens coupled to a 150 um long ridge waveguide, demonstrate a transmission efficiency of 82–94% across the 1480–1630 nm wavelength range, peaking at 82.9% at the typical 1550 nm wavelength for optomechanical sensing, with an end-face coupling efficiency of 46.3%. Our method, requiring only electron beam lithography (EBL) for patterning followed by direct etching of the SOI substrate’s sensor middle layer silica, simplifies the fabrication and enables the suspension of the sensor’s proof mass. This design, while making certain performance trade-offs, provides a robust and reliable solution for optomechanical sensor integration, simplifying the manufacturing process and ensuring compatibility with the MEMS platform.