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The layered heterostructure of Nitrogen-doped carbon quantum dots (N doped-CQDs) spin-coated onto the hydrothermally grown ZnO nanorods surface (N doped-CQDs/ZnO NRs) was prepared and characterized for their potential application in the UV photodetection. Photoluminescence study exhibits the decreased intensity of near-band-emission (400 nm) of layered N doped-CQDs/ZnO NRs heterostructure due to the energy transfer from N doped-CQDs to surface states of ZnO nanorods and decreased the recombination of charge carriers. N doped-CQDs/ZnO NRs heterostructure showed the improved photocurrent density of 105.7 μA/cm2, higher responsivity (105.3 mA/W) and EQE (35.8%) at 1 V [UV (365 nm) of l mW/cm2] when compared to that (42.2 μA/cm2, 41.98 mA/W and 14.2% at 1 V) of bare ZnO nanorod based device.

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Layered N Doped-CQDs/ZnO NRs Heterostructure Thin Films for Improved UV Photodetector Performance

  • 会议论文

  • 发表日期：

    2025年

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  • Lavanya Thyda,
  • Koppula Naresh,
  • Joel K. Joseph,
  • S. Suneetha,
  • Kuppusamy Thangaraju

摘要

The layered heterostructure of Nitrogen-doped carbon quantum dots (N doped-CQDs) spin-coated onto the hydrothermally grown ZnO nanorods surface (N doped-CQDs/ZnO NRs) was prepared and characterized for their potential application in the UV photodetection. Photoluminescence study exhibits the decreased intensity of near-band-emission (400 nm) of layered N doped-CQDs/ZnO NRs heterostructure due to the energy transfer from N doped-CQDs to surface states of ZnO nanorods and decreased the recombination of charge carriers. N doped-CQDs/ZnO NRs heterostructure showed the improved photocurrent density of 105.7 μA/cm2, higher responsivity (105.3 mA/W) and EQE (35.8%) at 1 V [UV (365 nm) of l mW/cm2] when compared to that (42.2 μA/cm2, 41.98 mA/W and 14.2% at 1 V) of bare ZnO nanorod based device.