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Impedance Source Inverters (ZSI) hold a prominent position in solar Photovoltaic (PV) applications as a superior alternative to the combination of step-up choppers and inverters for driving AC loads from solar PV panels. In their conventional form, two-level inverters typically employ eight switching states. However, to enable the boost operation essential in ZSI systems, an additional shoot-through state becomes indispensable. In general, two DC voltages of opposite polarities compared with reference voltages, ultimately creating the shoot-through state. This paper presents a comprehensive thermal analysis of different Pulse Width Modulation (PWM) schemes employed in Impedance Source Inverters (ZSIs). The primary objective is to compare the switching and conduction losses of the inverter’s switches, considering a detailed thermal model that considers the thermal characteristics of the Insulated Gate Bipolar Transistor (IGBT) and heatsink.

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Thermal Analysis and Comparison of Impedance Source Inverter with Multiple Modulation Schemes

  • 会议论文

  • 发表日期：

    2026年

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  • Vinodh Kumar Pandraka,
  • Janardhan Gurram,
  • V. Vimala Devi

摘要

Impedance Source Inverters (ZSI) hold a prominent position in solar Photovoltaic (PV) applications as a superior alternative to the combination of step-up choppers and inverters for driving AC loads from solar PV panels. In their conventional form, two-level inverters typically employ eight switching states. However, to enable the boost operation essential in ZSI systems, an additional shoot-through state becomes indispensable. In general, two DC voltages of opposite polarities compared with reference voltages, ultimately creating the shoot-through state. This paper presents a comprehensive thermal analysis of different Pulse Width Modulation (PWM) schemes employed in Impedance Source Inverters (ZSIs). The primary objective is to compare the switching and conduction losses of the inverter’s switches, considering a detailed thermal model that considers the thermal characteristics of the Insulated Gate Bipolar Transistor (IGBT) and heatsink.