Ion implantation technology is a wildly used method to introduce dopants into solid materials and develop functionalities. Ion implanted carbon materials can embed electron spin with long coherence time for quantum bit (qubit) applications. The negligible hyperfine interactions and spin orbit coupling in the carbon architecture plays a dominate role. To obtain carbon-based spin materials with high quantity, the ion implantation procedure demands delegated tuning on beam energy and dosage etc. This article reviews typical ion implantation approaches used for carbon materials such as diamond, fullerenes and graphene. The influence of the process parameters to the precision and efficiency of the implantation has been discussed. Carbon materials have excellent application prospects in the field of quantum information, and through various processes such as ion implantation, we can obtain functional materials that exceed expectations.