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Resistive switching characteristics of Y-doped HfO2 memory devices annealed under Nitrogen were investigated in this work. Ag/Y:HfO2/Pt was prepared by radio frequency magnetron sputtering at room temperature and annealed in N2 atmosphere. The typical bipolar resistive switching effects are observed in the annealed Y:HfO2 thin films. The results indicate that the RS performance of the devices annealed in nitrogen is significantly improved and has good endurance and retention, which kept RS performance after 300 sweep cycles. It can be induced that the main conduction mechanism variation of RRAM is space charge limited current (SCLC) at low resistance state because of increasing oxygen vacancies after annealing.

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Improving Resistive Switching Performance of Y-Doped HfO2 by Annealing Process

  • 会议论文

  • 发表日期：

    2025年

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  • Weisen Luo

摘要

Resistive switching characteristics of Y-doped HfO2 memory devices annealed under Nitrogen were investigated in this work. Ag/Y:HfO2/Pt was prepared by radio frequency magnetron sputtering at room temperature and annealed in N2 atmosphere. The typical bipolar resistive switching effects are observed in the annealed Y:HfO2 thin films. The results indicate that the RS performance of the devices annealed in nitrogen is significantly improved and has good endurance and retention, which kept RS performance after 300 sweep cycles. It can be induced that the main conduction mechanism variation of RRAM is space charge limited current (SCLC) at low resistance state because of increasing oxygen vacancies after annealing.