In order to address the critical issue of high overload resistance in silicon-based MEMS inertial trigger switches, a double-stop mechanism with two-stage buffering capability was proposed. This mechanism consists of V-shaped column mesh electrodes and a center stop. It combines rigid and flexible structures to share part of impact to protect the flexible structure when it deforms, which solves the shortcomings of silicon-based structures with rigid or flexible structures at high impacts. By using finite element simulation software, the modal and high overload resistance performance were simulated. 20000 g-0.5 ms acceleration and 20000 g-3 ms acceleration were simulated as the overloads during service environment and launch environment respectively. The results indicate that the maximum equivalent stress of the designed switch is well below the yield limit of silicon in different directions during both service and launch environments, demonstrating its excellent high overload resistance performance under 20000 g acceleration. By the comparison of the simulation results of the models with and without stop structure, it is confirmed that the V-shaped column mesh structure dramatically enhances the high overload resistance performance of the switch and avoids stress concentration, and that the double-stop mechanism further reduced the maximum stress of the switch under high overload.