Electron channeling contrast imaging (ECCI) offers an alternative approach to diffraction contrast transmission electron microscopy (TEM) for the examination of crystal defects, with ECCI allowing such defects to be imaged in the near surface region of bulk samples. Here the fundamental nature of electron channeling and ECCI are outlined, beginning with a basic description of the electron channeling phenomenon, followed by an explanation of how both electron channeling patterns (ECPs) and selected area electron channeling patterns (SACPs) are collected. The extension of the crystal orientation measurements techniques of ECPs and SACPs to the imaging of crystal defects using ECCI is then outlined. Various configurations for carrying out ECCI are reviewed. Specifics as to setting up optimal ECC imaging conditions in relation to ECP/SACPs and/or electron backscattered diffraction (EBSD) patterns are described. The imaging and characterization of dislocations in bulk samples using ECCI is examined in detail, with examples outlining the ability of using channeling contrast to characterize Burgers vectors and trace analysis to determine line directions. ECCI contrast from of other crystal defects, such as stacking faults and twins is examined. The sample preparation necessary to produce the generally flat, defect free surfaces necessary for carrying out ECCI is briefly outlined.