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The main intention of the research is to compare (R.L) and (I.L) of RF MEMS Switch with two different dielectric materials (BC-B and Al) for Ka-Band Applications. The performance of R.L and I.L of RF MEMS Shunt Switches with BCB (n = 44) and Al (n = 44) materials and the total group values n = 88 were compared at a frequency range of up to 20 GHz. Sample calculations are done using the clinical tools, and the anticipated means of Group 1 is 0.20 ± 0.1, Group 2 is 0.14, the value of alpha is 0.05, beta is 0.02, and g power value is 80%, respectively. Optimized dimensions for the RF MEMS switch performance were Length = 820 µm, Width = 275 µm, Beam Thickness = 0.8 µm, and Anchor = 1 µm for the beam. The return loss of the Aluminum (Al) dielectric material at –17.2712 dB is substantially lower than that of the Benzocyclobutene (BCB) dielectric material, which achieved a better return loss of –19.5131 dB. The statistical analysis indicates that the significance value obtained for return loss is 0.068 (p < 0.05), indicating insignificance, Meanwhile, the significance value for insertion loss is 0.001 (p < 0.05), indicating significance. In conclusion, Benzoclobutene (BCB) demonstrated superior performance with a return loss of –19.5181 dB compared to the Aluminum, Al, indicating its suitability for Ka-band applications.

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Enhancing Return Loss and Insertion Loss of RF MEMS Shunt Switches with BCB and Al Materials for Ka-Band Applications

  • 会议论文

  • 发表日期：

    2025年

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  • Kompala Monesh Babu,
  • Gopalan Anitha

摘要

The main intention of the research is to compare (R.L) and (I.L) of RF MEMS Switch with two different dielectric materials (BC-B and Al) for Ka-Band Applications. The performance of R.L and I.L of RF MEMS Shunt Switches with BCB (n = 44) and Al (n = 44) materials and the total group values n = 88 were compared at a frequency range of up to 20 GHz. Sample calculations are done using the clinical tools, and the anticipated means of Group 1 is 0.20 ± 0.1, Group 2 is 0.14, the value of alpha is 0.05, beta is 0.02, and g power value is 80%, respectively. Optimized dimensions for the RF MEMS switch performance were Length = 820 µm, Width = 275 µm, Beam Thickness = 0.8 µm, and Anchor = 1 µm for the beam. The return loss of the Aluminum (Al) dielectric material at –17.2712 dB is substantially lower than that of the Benzocyclobutene (BCB) dielectric material, which achieved a better return loss of –19.5131 dB. The statistical analysis indicates that the significance value obtained for return loss is 0.068 (p < 0.05), indicating insignificance, Meanwhile, the significance value for insertion loss is 0.001 (p < 0.05), indicating significance. In conclusion, Benzoclobutene (BCB) demonstrated superior performance with a return loss of –19.5181 dB compared to the Aluminum, Al, indicating its suitability for Ka-band applications.