Scholarlink

The chemical bath synthesis method is commonly used method to deposit affordable photodetectors. The composite thin ZnS/CuS thin film was synthesized in the current study using room temperature chemical bath deposition method on glass and p-Si substrate. X-ray diffraction patterns validated the crystallographic information of the synthesized ZnS/CuS composite thin film and the crystallite size was found approximately 19 nm. A broad absorption occurred in the optical absorption graph of ZnS/CuS thin film in the wavelength range of 400–700 nm. The band gap of the deposited thin film was found 2.1 eV which is lower than the band gap of pure ZnS. Multiple emission peaks were obtained in the Photoluminescence emission spectra which indicates the interstitial zinc (Iz), zinc vacancies (VZn), and sulfur vacancies (VS). The photo response parameters of fabricated ZnS/CuS:p-Si heterojunction were carried out under a halogen lamp of power density 30mW/cm2. The response current of the deposited film was calculated 1.04 × 10–4 A. The response and recovery times has found 1.34 s and 1.33 s, respectively. The responsivity was found 0.81 × 102 mA/W. So, it can be efficiently used as photodetector.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Room Temperature Chemical Bath Synthesis of ZnS/CuS Composite Thin Film Photodetector

  • 会议论文

  • 发表日期：

    2025年

查看全文
  • Simran Kumari,
  • Surbhi,
  • Ajeet Gupta,
  • Sarvendra Kumar,
  • Himanshu Sharma,
  • Anjali Verma,
  • Devendra Kumar Rana

摘要

The chemical bath synthesis method is commonly used method to deposit affordable photodetectors. The composite thin ZnS/CuS thin film was synthesized in the current study using room temperature chemical bath deposition method on glass and p-Si substrate. X-ray diffraction patterns validated the crystallographic information of the synthesized ZnS/CuS composite thin film and the crystallite size was found approximately 19 nm. A broad absorption occurred in the optical absorption graph of ZnS/CuS thin film in the wavelength range of 400–700 nm. The band gap of the deposited thin film was found 2.1 eV which is lower than the band gap of pure ZnS. Multiple emission peaks were obtained in the Photoluminescence emission spectra which indicates the interstitial zinc (Iz), zinc vacancies (VZn), and sulfur vacancies (VS). The photo response parameters of fabricated ZnS/CuS:p-Si heterojunction were carried out under a halogen lamp of power density 30mW/cm2. The response current of the deposited film was calculated 1.04 × 10–4 A. The response and recovery times has found 1.34 s and 1.33 s, respectively. The responsivity was found 0.81 × 102 mA/W. So, it can be efficiently used as photodetector.