Nanocrystalline thin films of tungsten, molybdenum, and sulfur ions using sodium tungstate (Na2WO4), ammonium molybdate ((NH4)2MoO4) and thiourea (CH4N2S) were synthesized via chemical bath deposition (CBD) method. The morphological, structural, and optoelectronic properties of Chalcogenide WS2/MoS2 composite nanocrystalline thin film were studied for WS2/MoS2 deposited on p-type Silicon and glass substrates. The XRD results confirm that a hexagonal phase has formed with a crystallite size of ~15 nm. The Spectra of the optical absorption show maximum absorption peaks at ~377 nm and 441 nm, which lie in the UV–visible region of the electromagnetic spectrum. The energy band gap was estimated at ~1.85 eV and 2.93 eV using Tauc plot. To determine the transport parameters, I–V characteristics across the interfacial structure junction were measured. A photodetector application involving the WS2-MoS2/p-Si structure was also investigated by measuring its photo response characteristics.