In this work, we propose to develop a simple oblige angle deposited (OAD) TiO2-columnar on Si substrate for deep UV photodetector application using the e-beam evaporation technique. The X-ray diffraction (XRD) result of the fabricated TiO2-columnar sample indicates that the material exhibits an amorphous structure. It is fascinating to observe the successfully deposited TiO2-columnar structure on Si substrate from SEM images. The photodetector device exhibits rectifying graph, demonstrating a rectification ratio of approximately ~ 470 at 3 V. Additionally, the device gives a rapid response time, with a rise time and a fall time of ~ 0.161 s and ~ 0.195 s, respectively, at − 2 V while switching on and off under white light. Furthermore, the manufactured device displays a strong response in the deep UV region of wavelength range ~ 200 to ~ 300 nm, as indicated by the response spectrum. And, the higher intensity was observed at ~ 250 nm (deep UV) with the responsivity values of ~ 0.23 A/W at − 2 V. Therefore, the proposed simple fabrication method using OAD may be applicable for developing UV photodetector applications.