Design of Germanium-Based CsGeI3 and RbGeI3 Double Absorber Layers Perovskite Solar Cell
摘要
In this work, we design and investigate the performance of a lead-free perovskite solar cell with double absorber layers CsGeI3 and RbGeI3, in terms of open circuit voltage (Voc), power conversion efficiency (PCE) and fill factor (FF). Using SCAPS-1D tool, we obtained the key parameters of solar cell such as Voc, PCE, short circuit current (Jsc) and FF. Here, the effect of RbGeI3 thickness, doping concentration and defect density are systematically investigated and optimized to enhance the device performance. RbGeI3 has the properties of non-toxicity, greater absorption and stable in nature. Also, CsGeI3 possesses superior thermal stability and environmental robustness compared to organic based perovskites, enabling its application in harsh environments and leading to longer device lifetimes. The proposed device shows high power conversion efficiency 32.52%, large fill factor 89.18%, high current density 32.74 mA/cm2 and high open circuit voltage 1.11 V, these parameters improved significantly with compared to reported single absorber layer perovskite solar cell.