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This work examines the impact of Heavy ion strikes at various positions on the normally-off n-channel GaN HEMT. The robustness of device is analyzed for LETs (Linear Energy Transfer) values varying from 0.2 to 1.0 pC/µm. The radiation induced changes in the off-state drain current have been reported in this study. Furthermore, the thermal stability of the device is studied for varying device temperature, depicting a minute decrease in off-state current with increasing temperature.

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Reliability Analysis of GaN-Based n-Channel HEMT with p-GaN/AlGaN/GaN Epitaxial Stack Under Heavy Ion Particle Strikes

  • 会议论文

  • 发表日期：

    2025年

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  • Aryan,
  • Khushwant Sehra,
  • Poonam Kasturi,
  • Manoj Saxena

摘要

This work examines the impact of Heavy ion strikes at various positions on the normally-off n-channel GaN HEMT. The robustness of device is analyzed for LETs (Linear Energy Transfer) values varying from 0.2 to 1.0 pC/µm. The radiation induced changes in the off-state drain current have been reported in this study. Furthermore, the thermal stability of the device is studied for varying device temperature, depicting a minute decrease in off-state current with increasing temperature.