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This work investigates the effect of angled heavy ion particle strikes on p-channel GaN devices for analyzing its reliability for space applications. The results indicate the rise in drain current with increasing LET. This is in accordance to parasitic bipolar effect and back-channel effect. At a of LET 1 pC/µm, the collective charge increases with increasing angle of heavy ion particle strike. TCAD simulation gives physical insights into the charge generation mechanism in a p-channel GaN FET post heavy ion particle strike.

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Impact of Angled Heavy Ion Particle Strike on GaN-Based P-Channel FETs for Space Applications

  • 会议论文

  • 发表日期：

    2025年

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  • Ayushi Dixit,
  • Khushwant Sehra,
  • Poonam Kasturi,
  • Manoj Saxena

摘要

This work investigates the effect of angled heavy ion particle strikes on p-channel GaN devices for analyzing its reliability for space applications. The results indicate the rise in drain current with increasing LET. This is in accordance to parasitic bipolar effect and back-channel effect. At a of LET 1 pC/µm, the collective charge increases with increasing angle of heavy ion particle strike. TCAD simulation gives physical insights into the charge generation mechanism in a p-channel GaN FET post heavy ion particle strike.