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This Chapter introduces that under high-speed turn-off conditions, the rapid change in off-state current dIDS(off)/dt of SiC MOSFETs leads to more severe turn-off voltage overshoot compared to Si IGBTs, posing challenges in applications. Another effect of high switching speed is the high rate of voltage change \({\text{d}V}_{\text{DS}}/{\text{d}t}\) , which results in crosstalk issues affecting the gate-source voltage \({V}_{\text{GS}}\) .

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Impact and Countermeasures of High dv/dt—Crosstalk

  • 章节

  • 发表日期：

    2025年

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  • Yuan Gao,
  • Yan Zhang

摘要

This Chapter introduces that under high-speed turn-off conditions, the rapid change in off-state current dIDS(off)/dt of SiC MOSFETs leads to more severe turn-off voltage overshoot compared to Si IGBTs, posing challenges in applications. Another effect of high switching speed is the high rate of voltage change \({\text{d}V}_{\text{DS}}/{\text{d}t}\) , which results in crosstalk issues affecting the gate-source voltage \({V}_{\text{GS}}\) .